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SD1563
RF & MICROWAVE TRANSISTORS UHF PULSED APPLICATIONS
.350 .300 .9. .REFRACTORY .EMI .I
WATTS @ 10SEC PULSE WIDTH, 10% DUTY CYCLE WATTS @ 250SEC PULSE WIDTH, 10% DUTY CYCLE 5 dB MIN. GAIN GOLD METALLIZATION T TER BALLASTING AND LOW THERMAL RESISTANCE FOR RELIABILITY AND RUGGEDNESS N FINITE VSWR CAPABILITY AT SPECIFIED OPERATING CONDITIONS
.400 x .400 2LFL (M106) hermetically sealed ORDER CODE SD1563 BRANDING SD1563
PIN CONNECTION
DESCRIPTION The SD1563 is a gold metallized silicon NPN pulse power transistor. The SD1563 is designed for applications requiring high peak power and low duty cycles within the frequency range of 400 - 500 MHz. ABSOLUTE MAXIMUM RATINGS (T case = 25 C)
Symbol Parameter
1. Collector 2. Base
3. Emitter 4. Base
Value
Unit
VCBO VCES VEBO IC PDISS TJ T STG
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature
65 65 3.5 21.6 875 +200 - 65 to +150
V V V A W C C
THERMAL DATA RTH(j-c)
September 7, 1994
Junction-Case Thermal Resistance
0.2
C/W
1/7
SD1563
ELECTRICAL SPECIFICATIONS (T case = 25 C) STATIC
Symbol Test Conditions Value Min. Typ. Max. Unit
BVCBO BVCES BVCEO BVEBO ICES hFE
I C = 50 mA I C = 50 mA I C = 50 mA I E = 10 mA VCE = 30 V VCE = 5 V
IE = 0 mA VBE = 0 V IB = 0 mA IC = 0 mA IE = 0 mA IC = 5 A
65 65 28 3.5 -- 10
-- -- -- -- -- --
-- -- -- -- 7.5 100
V V V V mA --
DYNAMIC
Symbol Test Conditions Value Min. Typ. Max. Unit
POUT PG c
Note:
f = 425 MHz f = 425 MHz f = 425 MHz =
PIN = 33.5 W POUT = 300 W PIN = 25 W =
10%
VCE = 40 V VCE = 40 V VCE = 40 V
300 9.5 55
-- -- --
-- -- --
W dB %
Pulse W idth
250Sec, Dut y Cyle
TYPICAL PERFORMANCE POUT (W) 360 350 325 310 300 P.W. (Sec) 10 20 100 500 1000 D.C. (%) 10 10 10 10 10 TJ (C max.) 150 150 150 150 150 VCC 40 40 40 40 40
2/7
SD1563
TYPICAL PERFORMANCE (P.W. = 120Sec)
POWER OUTPUT vs POWER INPUT
POWER GAIN vs FREQUENCY
POWER OUTPUT vs COLLECTOR VOLTAGE
EFFICIENCY vs POWER INPUT
3/7
SD1563
TYPICAL PERFORMANCE (P.W. = 120Sec) EFFICIENCY vs FREQUENCY EFFICIENCY vs COLLECTOR VOLTAGE
IMPEDANCE DATA (P.W. = 120Sec)
TYPICAL INPUT IMPEDANCE
TYPICAL COLLECTOR LOAD IMPEDANCE
4/7
SD1563
TYPICAL PERFORMANCE (P.W. = 250Sec)
POWER GAIN vs FREQUENCY
EFFICIENCY vs FREQUENCY
POWER OUTPUT vs FLANGE TJ @ CONSTANT 125C
THERMAL RESISTANCE vs PULSE WIDTH
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SD1563
IMPEDANCE DATA (P.W. = 250Sec)
TYPICAL INPUT IMPEDANCE
TYPICAL COLLECTOR LOAD IMPEDANCE
6/7
SD1563
PACKAGE MECHANICAL DATA Ref.: Dwg. No.12-0106 rev. B
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibili ty for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. (c)1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.
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